RF-IF AMPLIFIER

GENERAL DESCRIPTION - The I'A703 is a monolithic RF-IF Amplifier constructed using the Fairchild Planar* epitaxial process and is intended for use as a limiting or non-limiting amplifier, harmonic mixer, or oscillator to 150 MHz. The low internal feedback of the device insures a higher stabilit

RF-IF AMPLIFIER

GENERAL DESCRIPTION - The I'A703 is a monolithic RF-IF Amplifier constructed using the Fairchild Planar* epitaxial process and is intended for use as a limiting or non-limiting amplifier, harmonic mixer, or oscillator to 150 MHz. The low internal feedback of the device insures a higher stabilit

RF-IF AMPLIFIER

GENERAL DESCRIPTION - The I'A703 is a monolithic RF-IF Amplifier constructed using the Fairchild Planar* epitaxial process and is intended for use as a limiting or non-limiting amplifier, harmonic mixer, or oscillator to 150 MHz. The low internal feedback of the device insures a higher stabilit

RF-IF AMPLIFIER

GENERAL DESCRIPTION - The I'A703 is a monolithic RF-IF Amplifier constructed using the Fairchild Planar* epitaxial process and is intended for use as a limiting or non-limiting amplifier, harmonic mixer, or oscillator to 150 MHz. The low internal feedback of the device insures a higher stabilit

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

130.0 Watts Push - Pull Package style AH General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Semiconductor Laser for LBPLaser Beam Printers

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Linear Integrated Circuit RF−IF Amplifier