Description

The TP65H070G4LSGB 650V, 72mΩ Gallium Nitride (GaN)

FET is a normally-off device. It combines state-of-the-art high

voltage GaN HEMT and low voltage silicon MOSFET

technologies—offering superior reliability and performance.

The Gen IV SuperGaN® platform uses advanced epi and

patented design technologies to simplify manufacturability

while improving efficiency over silicon via lower gate charge,

output capacitance, crossover loss, and reverse recovery

charge

Features

• Gen IV technology

• JEDEC-qualified GaN technology

• Dynamic RDS(on)eff production tested

• Robust design, defined by

— Wide gate safety margin

— Transient over-voltage capability

• Very low QRR

• Reduced crossover loss

• RoHS compliant and Halogen-free packaging

Applications

• Datacom

• Broad industrial

• PV inverter

• Servo motor

• Consumer

• Computing