Description

The TP65H050G4YS 650V, 50 mΩ gallium nitride (GaN) FET

is a normally-off device using Transphorm’s Gen IV platform.

It combines a state-of-the-art high voltage GaN HEMT with a

low voltage silicon MOSFET to offer superior reliability and

performance.

The Gen IV SuperGaN® platform uses advanced epi and

patented design technologies to simplify manufacturability

while improving efficiency over silicon via lower gate charge,

output capacitance, crossover loss, and reverse recovery

charge.

Features

• JEDEC qualified GaN technology

• Dynamic RDS(on)eff production tested

• Robust design, defined by

— Wide gate safety margin

— Transient over-voltage capability

• Enhanced inrush current capability

• Very low QRR

• Reduced crossover loss

Applications

• Datacom

• Broad industrial

• PV inverter

• Servo motor