Description

The TP65H050G4BS 650V, 50 mΩ gallium nitride (GaN) FET

is a normally-off device using Transphorm’s Gen IV platform.

It combines a state-of-the-art high voltage GaN HEMT with a

low voltage silicon MOSFET to offer superior reliability and

performance.

The Gen IV SuperGaN® platform uses advanced epi and

patented design technologies to simplify manufacturability

while improving efficiency over silicon via lower gate charge,

output capacitance, crossover loss, and reverse recovery

charge.

Features

 JEDEC qualified GaN technology

 Dynamic RDS(on)eff production tested

 Robust design, defined by

— Wide gate safety margin

— Transient over-voltage capability

 Enhanced inrush current capability

 Very low QRR

 Reduced crossover loss

Applications

 Datacom

 Broad industrial

 PV inverter

 Servo motor