Lithium Ion Secondary Battery Applications

Portable Equipment Applications

Notebook PC Applications

• Low drain-source ON resistance : P Channel RDS (ON) = 25 mΩ (typ.)

N Channel RDS (ON) = 20 mΩ (typ.)

• High forward transfer admittance : P Channel |Yfs| = 12S (typ.)

N Channel |Yfs| = 14S (typ.)

• Low leakage current : P Channel IDSS = −10 μA (VDS = −30 V)

N Channel IDSS = 10 μA (VDS = 30 V)

• Enhancement-mode

: P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)