FEATURES

■ LOW INTERMODULATION DISTORTION

IM3=-45 dBc at Pout= 28.0dBm

Single Carrier Level

■ HIGH POWER P1dB=39.5 dBm at 14.0 GHz to 14.5 GHz

■ HIGH GAIN G1dB=5.0 dB at 14.0 GHz to 14.5 GHz

■ BROAD BAND INTERNALLY MATCHED FET

■ HERMETICALLY SEALED PACKAGE