FEATURES

■ HIGH POWER

P1dB=42.0dBm at 13.75GHz to 14.5GHz

■ BROAD BAND INTERNALLY MATCHED FET

■ HIGH GAIN

G1dB=6.0dB at 13.75GHz to 14.5GHz

■ HERMETICALLY SEALED PACKAGE

■ LOW INTERMODULATION DISTORTION

IM3(Min.)=−25dBc at Po=36dBm Single Carrier Level