FEATURES

･BROAD BAND INTERNALLY MATCHED FET

･HIGH POWER

P1dB= 39.0dBm at 13.75GHz to 14.5GHz

･HIGH GAIN

G1dB= 7.0dB at 13.75GHz to 14.5GHz

･LOW INTERMODULATION DISTORTION

IM3= -45dBc at Pout= 27.0dBm

Single Carrier Level

･HERMETICALLY SEALED PACKAGE