Features

⚫ BiCD process integrated monolithic IC

⚫ Two Built-in H-bridge for output.

⚫ Two Built-in H-bridge for output. (Mixed Decay / Slow Decay / Fast Decay)

⚫ Power saving function (Sleep mode)

⚫ PWM constant current drive

⚫ 3.3 V regulator output

⚫ BiCD structure: DMOSFET is used for output power transistor

⚫ High breakdown voltage, large current: 50 V / 3.0 A (absolute maximum rating)

⚫ Thermal shutdown detection (TSD), overcurrent detection (ISD), and low power supply voltage detection (UVLO)

⚫ Error detection flag output function (LO).

⚫ Reduction of external parts for charge pump

⚫ Package : QFN32(5 mm×5 mm)