Features

• BiCD process integrated monolithic IC

• Two Built-in H-bridge for output

• Decay modes select function (Mixed Decay / Slow Decay / Fast Decay)

• Power saving function (Sleep mode)

• PWM constant current drive

• 3.3 V regulator output

• BiCD structure: DMOSFET is used for output power transistor.

• High breakdown voltage, large current: 50 V / 2.5 A (absolute maximum rating)

• Thermal shutdown detection (TSD), overcurrent detection (ISD), and under voltage lockout detection (UVLO)

• Error detection flag output function (LO).

• Reduction of external parts for charge pump

• Package : P-HTSSOP28-0510-0.65-001