1 Features

• Qualified for Automotive Applications

• AEC-Q100 Qualified

– Device Temperature Grade 1

• Typical 5A peak source and sink drive current for

each channel

• Input and enable pins capable of handling –10V

• Output capable of handling –2V transients

• Absolute maximum VDD voltage: 30V

• Wide VDD operating range from 9.5V to 26V with

UVLO

• Hysteretic-logic thresholds for high noise immunity

• VDD independent input thresholds (TTL

compatible)

• Fast propagation delays (17ns typical)

• Fast rise and fall times (6ns and 10ns typical)

• 1ns typical delay matching between the two

channels

• Two channels can be paralleled for higher drive

current

• SOIC8 and VSSOP8 PowerPAD™ package

options

• Operating junction temperature range of –40°C to

150°C

2 Applications

• Automotive DC/DC converters

• Switched-mode power supplies (SMPS)

• Power factor correction (PFC) circuits

• DC/DC converter

• Motor drives

• Solar power supplies

• Pulse transformer driver

3 Description

The UCC27624V-Q1 is a dual-channel, high-speed,

low-side gate driver that effectively drives MOSFET,

IGBT and SiC power switches. UCC27624V-Q1

has a typical peak drive strength of 5A, which

reduces rise and fall times of the power switches,

lowers switching losses, and increases efficiency.

The device's fast propagation delay (17ns typical)

yields better power stage efficiency by improving the

deadtime optimization, pulse width utilization, control

loop response, and transient performance of the

system.

UCC27624V-Q1 can handle –10V at its inputs,

which improves robustness in systems with moderate

ground bouncing. The inputs are independent of

supply voltage and can be connected to most

controller outputs for maximum control flexibility. An

independent enable signal allows the power stage to

be controlled independently of main control logic. In

the event of a system fault, the gate driver can quickly

shut-off by pulling enable low. Many high-frequency

switching power supplies exhibit noise at the gate

of the power device, which can get injected into the

output pin on the gate driver and can cause the driver

to malfunction. The device's transient reverse current

and reverse voltage capability allow it to tolerate noise

on the gate of the power device or pulse-transformer

and avoid driver malfunction.

The UCC27624V-Q1 also features undervoltage

lockout (UVLO) for improved system robustness.

When there is not enough bias voltage to fully

enhance the power device, the gate driver output is

held low by the strong internal pull down MOSFET.