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UCC27624QDGNRQ1中文资料
UCC27624QDGNRQ1数据手册规格书PDF详情
1 Features
• Qualified for Automotive Applications
• AEC-Q100 Qualified
– Device Temperature Grade 1
– Device HBM ESD Classification Level H1C
– Device CDM ESD Classification Level C6
• Typical 5-A peak source and sink drive current for
each channel
• Input and enable pins capable of handling –10 V
• Output capable of handling –2-V transients
• Absolute maximum VDD voltage: 30 V
• Wide VDD operating range from 4.5 V to 26 V with
UVLO
• Hysteretic-logic thresholds for high noise immunity
• VDD independent input thresholds (TTL
compatible)
• Fast propagation delays (17-ns typical)
• Fast rise and fall times (6-ns and 10-ns typical)
• 1-ns typical delay matching between the two
channels
• Two channels can be paralleled for higher drive
current
• SOIC8 and VSSOP8 PowerPAD™ package
options
• Operating junction temperature range of –40°C to
150°C
2 Applications
• Automotive DC/DC Converters
• Switched-mode power supplies (SMPS)
• Power factor correction (PFC) circuits
• DC/DC converter
• Motor drives
• Solar power supplies
• Pulse transformer driver
3 Description
The UCC27624-Q1 is a dual-channel, high-speed,
low-side gate driver that effectively drives MOSFET,
IGBT, SiC, and GaN power switches. UCC27624-Q1
has a typical peak drive strength of 5 A, which
reduces rise and fall times of the power switches,
lowers switching losses, and increases efficiency.
The device's fast propagation delay (17-ns typical)
yields better power stage efficiency by improving the
deadtime optimization, pulse width utilization, control
loop response, and transient performance of the
system.
UCC27624-Q1 can handle –10 V at its inputs,
which improves robustness in systems with moderate
ground bouncing. The inputs are independent of
supply voltage and can be connected to most
controller outputs for maximum control flexibility. An
independent enable signal allows the power stage to
be controlled independently of main control logic. In
the event of a system fault, the gate driver can quickly
shut-off by pulling enable low. Many high-frequency
switching power supplies exhibit noise at the gate
of the power device, which can get injected into the
output pin on the gate driver and can cause the driver
to malfunction. The device's transient reverse current
and reverse voltage capability allow it to tolerate noise
on the gate of the power device or pulse-transformer
and avoid driver malfunction.
The UCC27624-Q1 also features undervoltage
lockout (UVLO) for improved system robustness.
When there is not enough bias voltage to fully
enhance the power device, the gate driver output is
held low by the strong internal pull down MOSFET.
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI(德州仪器) |
24+ |
标准封装 |
8347 |
原厂直销,大量现货库存,交期快。价格优,支持账期 |
|||
TI/德州仪器 |
25+ |
原厂封装 |
10000 |
||||
TI(德州仪器) |
24+ |
NA/ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
TI(德州仪器) |
2526+ |
Original |
50000 |
只做原装优势现货库存,渠道可追溯 |
|||
TI(德州仪器) |
23+ |
15000 |
专业帮助客户找货 配单,诚信可靠! |
||||
TI/德州仪器 |
24+ |
MSOP8 |
60000 |
||||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源! |
|||
TI/德州仪器 |
25+ |
原厂封装 |
9999 |
||||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
||||
TI(德州仪器) |
25+ |
HVSSOP-8 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
UCC27624QDGNRQ1 资料下载更多...
UCC27624QDGNRQ1 芯片相关型号
- 173179
- 28R0592-010
- 4855R00710000
- 4855R0075000
- 4855R00910000
- 4855R0095000
- 4855R0101000
- 4855R01010000
- 621-015-360-010
- 621-015-360-011
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- 621-015-360-013
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- 621-015-360-036
- 621-015-360-040
- 621-015-360-041
- 621-015-360-042
- BAT46_V01
- NCP15WL333J03RC
- NCP15WL333J03RC_V01
- NCP15WL683E03RC
- NCP15WL683E03RC_V01
- UCC27624DGNR
- UCC27624DR
Datasheet数据表PDF页码索引
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