1 Features

• Radiation tolerant

– Single Event Latch-up (SEL) immune to

43MeV-cm2/mg at 125°C

– ELDRS free to 30krad(Si)

– Total Ionizing Dose (TID) RLAT for every wafer

lot up to 30krad(Si)

• Supports Defense and Aerospace Applications

– Controlled baseline

– One fabrication, assembly, and test site

– Extended product life cycle

– Product traceability

– Outgassing test performed per ASTM E595

• Ultra-low offset voltage: ±0.25μV

• Zero drift: ±0.005μV/°C

• Zero crossover: 140dB CMRR true RRIO

• Low noise: 7.0nV√Hz at 1kHz

• No 1/f noise: 140nVPP (0.1Hz to 10Hz)

• Fast settling: 2μs (1V to 0.01%)

• Gain bandwidth: 10MHz

• Supply Voltage: ±1.25V to ±2.75V, 2.5V to 5.5V

• True rail-to-rail input and output

• EMI/RFI filtered inputs

2 Applications

• Satellite health monitoring and telemetry

• Scientific exploration payload

• Altitude and orbit control system (AOCS)

• Satellite electrical power system (EPS)

• Communications payload

• Radar imaging payload

3 Description

The OPA4H838-SEP precision amplifier is an ultralow

noise, fast-settling, zero-drift, zero-crossover

device that provide rail-to-rail input and output

operation. These features and excellent ac

performance, combined with only 0.25μV of offset

and 0.005μV/°C of drift over temperature, makes

the OPA4H838-SEP a great choice for driving

high-precision, analog-to-digital converters (ADCs)

or buffering the output of high-resolution, digital-toanalog

converters (DACs). This design results in

excellent performance when driving analog-to-digital

converters (ADCs) without degradation of linearity.

The OPA4H838-SEP is offered in a TSSOP-14

package. The OPA4H838-SEP is specified from –

55°C to +125°C.