1 Features

• Radiation tolerant

– Single even latch-up (SEL) immune to 43

MeV•cm2/mg

– ELDRS free to 30 krad(Si)

– Total ionizing dose (TID) RLAT for every wafer

lot up to 30 krad(Si)

• Space enhanced plastic

– Au bondwire and NiPdAu lead finish

– Enhanced mold compound for low outgassing

– One fabrication, assembly, and test site

– Extended product life cycle

– Extended product change notification

– Product traceability

• Very-low offset drift: 1 μV/°C maximum

• Very-low offset: 120 μV

• Low input bias current: 10 pA maximum

• Low noise: 5.1 nV/√Hz

• Slew rate: 20 V/μs

• Low supply current: 2 mA maximum

• Input voltage range includes V– supply

• Wide supply range: 4.5 V to 18 V

2 Applications

• Satellite health monitoring and telemetry

• Scientific exploration payload

• Altitude and orbit control system (AOCS)

• Satellite electrical power system (EPS)

• Communications payload

• Radar imaging payload

3 Description

The OPA4H014-SEP is a low-power JFET input

operational amplifier (op amp) that features good

drift and low input bias current. With an input range

that includes V– and a rail-to-rail output, designers

can take advantage of the low-noise characteristics

of JFET amplifiers while interfacing to single-supply,

precision analog-to-digital converters (ADCs) and

digital-to-analog converters (DACs).

The OPA4H014-SEP achieves 11‑MHz unity-gain

bandwidth and 20-V/μs slew rate, while consuming

only 1.8 mA (typical) of quiescent current. This device

runs on a single 4.5‑V to 18‑V supply or dual ±2.25‑V

to ±9‑V supplies.

The op amp is built in a plastic, 14‑pin,

TSSOP package with radiation hardness up to

43 MeV•cm2/mg (SET) and is ELDRS free up to

30 krad(Si).