1 Features

• GaN half bridge power stage with integrated driver: 100V (GaN FET options: 2.2mΩ, 4.4mΩ)

• Efficient and high-density power conversion with

– Ultra-low propagation delay (20ns) and matching (2ns)

– Independent turn-on and turn-off slew-rate control for both the GaN FETs

– Zero-voltage detection (ZVD) reporting for dead-time optimization

– Ideal diode mode (IDM) to reduce third quadrant losses in soft switching application

• Input control flexibility

– Independent input mode (IIM) control

– Single PWM input with resistor programmable dead time option for IO-limited controllers

• Robust protection

– Interlock protection in IIM mode (LMG2104)

– Internal bootstrap supply voltage regulation to prevent GaN FET overdrive

– VDS monitoring based cycle-by-cycle shortcircuit protection

– Fault indication for over-temperature, supply under-voltage and short-circuit events

• External bias power supply: 5V

– Supports 3.3V and 5V input logic levels

• Parasitic optimized QFN package with exposed top pad to support top-side cooling