1 Features

• GaN half bridge power stage with integrated driver: 100V (GaN FET options: 2.2mΩ, 4.4mΩ)

• Efficient and high-density power conversion with

– Ultra-low propagation delay (20ns) and matching (2ns)

– Independent turn-on and turn-off slew-rate control for both the GaN FETs

– Zero-voltage detection (ZVD) reporting for dead-time optimization

– Ideal diode mode (IDM) to reduce third quadrant losses in soft switching application

• Input control flexibility

– Independent input mode (IIM) control

– Single PWM input with resistor programmable dead time option for IO-limited controllers

• Robust protection

– Interlock protection in IIM mode (LMG2104)

– Internal bootstrap supply voltage regulation to prevent GaN FET overdrive

– VDS monitoring based cycle-by-cycle shortcircuit protection

– Fault indication for over-temperature, supply under-voltage and short-circuit events

• External bias power supply: 5V

– Supports 3.3V and 5V input logic levels

• Parasitic optimized QFN package with exposed top pad to support top-side cooling

2 Applications

• Server PSU and BBU

• Telecom power

• Energy infrastructure

• Motor drives

• Class-D audio amplifiers

3 Description

The LMG210xR0xx device is a family of 100V halfbridge power stages, with integrated gate-driver and enhancement-mode gallium nitride (GaN) FETs. The devices consist of a high-frequency GaN FET driver a half-bridge configuration, that drives two 100V GaN FETs.

GaN FETs provide significant advantages for power conversion as GaN FETs have zero reverse recovery and very small input capacitance (CISS) and output capacitance (COSS). All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements, which can be easily mounted on PCBs.

The TTL logic compatible inputs support 3.3V and 5V logic levels, regardless of the VCC voltage. A proprietary bootstrap voltage control technique regulates the gate voltages of the enhancement mode GaN FETs within the safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. The device is an excellent option for applications requiring highfrequency, high-efficiency operation in a small form factor.