1 Features

• Vendor item drawing available, VID

V62/23627-01XE

• Total ionizing dose characterized at 30 krad (Si)

– Total ionizing dose radiation lot acceptance

testing (TID RLAT) for every wafer lot to 30

krad (Si)

• Single-event effects (SEE) characterized:

– Single event latch-up (SEL) immune to linear

energy transfer (LET) = 43 MeV-cm2 /mg

– Single event transient (SET) characterized to

43 MeV-cm2 /mg

• Wide operating range of 1.2 V to 5.5 V

• Single-supply translating gates at 5/3.3/2.5/1.8/1.2

V VCC

– TTL compatible inputs:

• Up translation:

– 1.8-V – Inputs from 1.2 V

– 2.5-V – Inputs from 1.8 V

– 3.3-V – Inputs from 1.8 V, 2.5 V

– 5.0-V – Inputs from 2.5 V, 3.3 V

• Down translation:

– 1.2-V – Inputs from 1.8 V, 2.5 V, 3.3 V,

5.0 V

– 1.8-V – Inputs from 2.5 V, 3.3 V, 5.0 V

– 2.5-V – Inputs from 3.3 V, 5.0 V

– 3.3-V – Inputs from 5.0 V

• 5.5 V tolerant input pins

• Output drive up to 25 mA AT 5-V

• Latch-up performance exceeds 250 mA per

JESD 17

• Space enhanced plastic (SEP)

– Controlled baseline

– Gold bondwire

– NiPdAu lead finish

– One assembly and test site

– One fabrication site

– Military (–55°C to 125°C) temperature range

– Extended product life cycle

– Product traceability

– Meets NASAs ASTM E595 outgassing

specification

2 Applications

• Enable or disable a digital signal

• Controlling an indicator LED

• Translation between communication modules and

system controllers

3 Description

The SN54SC4T00-SEP contains four independent 2-

input NAND Gates with Schmitt-trigger inputs. Each

gate performs the Boolean function Y = A ● B in

positive logic. The output level is referenced to the

supply voltage (VCC) and supports 1.8-V, 2.5-V, 3.3-V,

and 5-V CMOS levels.

The input is designed with a lower threshold circuit to

support up translation for lower voltage CMOS inputs

(for example 1.2 V input to 1.8 V output or 1.8 V input

to 3.3 V output). Additionally, the 5-V tolerant input

pins enable down translation (for example 3.3 V to 2.5

V output).