1 Features

• Qualified for JEDEC JEP180 for hard-switching

topologies

• 600-V GaN-on-Si FET with Integrated gate driver

– Integrated high precision gate bias voltage

– 200-V/ns CMTI

– 3.6-MHz switching frequency

– 20-V/ns to 150-V/ns slew rate for optimization

of switching performance and EMI mitigation

– Operates from 7.5-V to 18-V supply

• Robust protection

– Cycle-by-cycle overcurrent and latched shortcircuit

protection with < 100-ns response

– Withstands 720-V surge while hard-switching

– Self-protection from internal overtemperature

and UVLO monitoring

• Advanced power management

– Digital temperature PWM output

– Ideal diode mode reduces third-quadrant losses

in LMG3425R050

2 Applications

• High density industrial power supplies

• Solar inverters and industrial motor drives

• Uninterruptable power supplies

• Merchant network and server PSU

• Merchant telecom rectifiers

3 Description

The LMG342xR050 GaN FET with integrated driver

and protection enables designers to achieve new

levels of power density and efficiency in power

electronics systems.

The LMG342xR050 integrates a silicon driver that

enables switching speed up to 150 V/ns. TI’s

integrated precision gate bias results in higher

switching SOA compared to discrete silicon gate

drivers. This integration, combined with TI's lowinductance

package, delivers clean switching and

minimal ringing in hard-switching power supply

topologies. Adjustable gate drive strength allows

control of the slew rate from 20 V/ns to 150 V/ns,

which can be used to actively control EMI and

optimize switching performance. The LMG3425R050

includes ideal diode mode, which reduces thirdquadrant

losses by enabling adaptive dead-time

control.

Advanced power management features include digital

temperature reporting and fault detection. The

temperature of the GaN FET is reported through

a variable duty cycle PWM output, which simplifies

managing device loading. Faults reported include

overtemperature, overcurrent, and UVLO monitoring.