1 Features

• AEC-Q100 qualified with the following results

– Device temperature grade 1:

–40°C to +125°C ambient operating

temperature range

– Device HBM ESD classification level 2

– Device CDM ESD classification level C4B

• 3-V to 65-V input range

• Reverse input protection down to –65 V

• Low quiescent current 35 μA (max) in operation

• Low 3.3-μA (max) shutdown current (EN = Low)

• Ideal diode operation with 13-mV A to C forward

voltage drop regulation

• Drives external back-to-back N-Channel MOSFETs

• Integrated 30-mA boost regulator

• Active rectification up to 200 kHz

• Fast response to reverse current blocking: 0.5 μs

• Fast forward GATE turn ON delay: 0.72 μs

• Adjustable overvoltage protection

• Meets automotive ISO7637 transient requirements

with a suitable TVS diode

• Available in space saving 12-pin WSON package

2 Applications

• Automotive battery protection

– ADAS domain controller

– Premium audio amplifier

– Head unit

3 Description

The LM74722-Q1 ideal diode controller drives and

controls external back-to-back N-Channel MOSFETs

to emulate an ideal diode rectifier with power path

ON and OFF control and overvoltage protection.

The wide input supply of 3 V to 65 V allows

protection and control of 12-V and 24-V automotive

battery powered ECUs. The device can withstand

and protect the loads from negative supply voltages

down to –65 V. An integrated ideal diode controller

(GATE) drives the first MOSFET to replace a Schottky

diode for reverse input protection and output voltage

holdup. A strong boost regulator with fast turn-ON

and OFF comparators ensures robust and efficient

MOSFET switching performance during automotive

testing, such as ISO16750 or LV124, where an ECU

is subjected to input short interruptions and AC

superimpose input signals up to 200-kHz frequency.

Low quiescent current 35 μA (maximum) in operation

enables always ON system designs. With a second

MOSFET in the power path, the device allows load

disconnect control using EN pin. Quiescent current

reduces to 3.3 μA (maximum) with EN low. The

device features an adjustable overvoltage cutoff or

overvoltage clamp protection using OV pin.