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LM74721-Q1中文资料
LM74721-Q1数据手册规格书PDF详情
1 Features
• AEC-Q100 qualified with the following results
– Device temperature grade 1:
–40°C to +125°C ambient operating
temperature range
– Device HBM ESD classification level 2
– Device CDM ESD classification level C4B
• 3-V to 65-V input range
• Reverse input protection down to –33 V
• Integrated VDS clamp for Input TVS less operation
for ISO7637 pulse suppression
• Low quiescent current 35 μA (max) in operation
• Low 3.3-μA (max) shutdown current (EN = Low)
• Ideal diode operation with 17-mV A to C forward
voltage drop regulation
• Drives external back-to-back N-Channel MOSFETs
• Integrated 30-mA boost regulator
• Fast response to reverse current blocking: 0.5 μs
• Active rectification up to 100 kHz
• Adjustable overvoltage protection
• Available in space saving 12-pin WSON package
• Pin-to-pin compatible with LM74720-Q1
2 Applications
• Automotive battery protection
– ADAS domain controller
– Camera, radar ECUs
– Premium audio amplifier
– Head-up display
3 Description
The LM74721-Q1 ideal diode controller drives and
controls external back to back N-Channel MOSFETs
to emulate an ideal diode rectifier with power path
ON and OFF control and overvoltage protection. The
wide input supply of 3 V to 65 V allows protection and
control of 12-V automotive battery powered ECUs.
The device can withstand and protect the loads from
negative supply voltages down to –33-V DC. An
integrated ideal diode controller (GATE) drives the
first MOSFET to replace a Schottky diode for reverse
input protection and output voltage holdup. Integrated
VDS clamp feature enables input TVS less system
designs for automotive ISO7637 pulse suppression.
A strong boost regulator with fast turn ON and OFF
comparators ensures robust and efficient MOSFET
switching performance during automotive testing such
as ISO16750 or LV124, where an ECU is subjected
to input short interruptions and AC superimpose input
signals up to 100-kHz frequency. Low Quiescent
Current 35 μA (maximum) in operation enables
always ON system designs. With a second MOSFET
in the power path, the device allows load disconnect
control using EN pin. Quiescent current reduces to
3.3 μA (maximum) with EN low. The device features
an adjustable overvoltage cutoff protection feature for
load dump protection.
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TI德州仪器 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
||||
TI |
24+ |
WSON12 |
1950 |
市场最低 原装现货 假一罚百 可开原型号 |
|||
TI |
23+ |
N/A |
8000 |
只做原装现货 |
|||
TI |
23+ |
N/A |
7000 |
||||
TI/德州仪器 |
25+ |
WSON12 |
880000 |
明嘉莱只做原装正品现货 |
|||
TI/德州仪器 |
24+ |
WSON12 |
60000 |
||||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源! |
|||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
||||
TI/德州仪器 |
25+ |
原厂封装 |
9999 |
||||
TI/德州仪器 |
25+ |
原厂封装 |
11000 |
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