SCR

DESCRIPTION The TYN 0510 ---> TYN 1010 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load. FEATURES ■ HIGH SURGE CAPA

SCR

DESCRIPTION The TYN 0510 ---> TYN 1010 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load. FEATURES ■ HIGH SURGE CAPA

10A SCR

DESCRIPTION The TYNx10 Silicon Controlled Rectifiers is a high performance glass passivated technology. This general purpose Silicon Controlled Rectifiers is designed for power supply up to 400Hz on resistive or inductive load. Main Features IT(RMS) 10 A VDRM/VRRM 400, 600 and 800 V

SCR

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10A SCR

DESCRIPTION The TYNx10 Silicon Controlled Rectifiers is a high performance glass passivated technology. This general purpose Silicon Controlled Rectifiers is designed for power supply up to 400Hz on resistive or inductive load. Main Features IT(RMS) 10 A VDRM/VRRM 400, 600 and 800 V

10A SCR

DESCRIPTION The TYNx10 Silicon Controlled Rectifiers is a high performance glass passivated technology. This general purpose Silicon Controlled Rectifiers is designed for power supply up to 400Hz on resistive or inductive load. Main Features IT(RMS) 10 A VDRM/VRRM 400, 600 and 800 V

封装/外壳：TO-220-3 包装：散装 描述：SCR 400V 10A TO220AB 分立半导体产品 晶闸管 - SCR

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

5 AMPERE POWER TRANSISTOR NPN SILICON

High Voltage NPN Silicon Transistors . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage — VCEO = 200 Volts • DC Current Gain Specified @ 1.0 and 2.5 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.8

POWER RECTIFIERS(4.0A,500-1000V)

Fast Settling, Video Op Amp with Disable

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