型号 功能描述 生产厂家 企业 LOGO 操作
TW045N120C

MOSFETs Silicon Carbide N-Channel MOS

Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 45 m Ω (typ.) (5) Less susceptible to malfunction due to high threshold voltage:

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东芝

TW045N120C

Power SiC MOSFETs

TOSHIBA

东芝

MOSFETs Silicon Carbide N-Channel MOS

Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 45 m Ω (typ.) (5) Less susceptible to malfunction due to high threshold voltage:

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东芝

更新时间:2026-1-2 11:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TST
23+
SMD
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
24+
N/A
62000
一级代理-主营优势-实惠价格-不悔选择
TST
23+
SMD
56000
TST全系列在售,支持实单
APEX/CIRRUS
16+
NA
8800
原装现货,货真价优
TOSHIBA
24+
con
5
现货常备产品原装可到京北通宇商城查价格
SAMTEC
24+
con
35960
查现货到京北通宇商城
SAMTEC/申泰
2450+
CONN
9850
只做原装正品现货!或订货假一赔十!
TST
23+
-
3000
华南总代
TOSHIBA
5
SAMTEC/申泰
2022+
NA
10000
只做原装,价格优惠,长期供货。

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