| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TW030N120C | MOSFETs Silicon Carbide N-Channel MOS Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 30 m Ω (typ.) (5) Less susceptible to malfunction due to high threshold voltage: | TOSHIBA 东芝 |   | |
TW030N120C | Power SiC MOSFETs Application ScopeSwitching regulators\nPolarityN-ch\nRoHS Compatible Product(s) (#)Available | TOSHIBA 东芝 | | |
MOSFETs Silicon Carbide N-Channel MOS Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 30 m Ω (typ.) (5) Less susceptible to malfunction due to high threshold voltage: | TOSHIBA 东芝 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
嘉硕 |
23+ |
3.2*5 |
20000 |
全新原装假一赔十 |
|||
Toshiba |
26+ |
TO-247-3 |
3652 |
原厂正品现货供应SIC全系列 |
|||
MOT |
25+ |
DIP |
2987 |
绝对全新原装现货供应! |
|||
MOT |
26+ |
DIP |
6868 |
原装现货,可开13%税票 |
|||
MOT |
23+ |
DIP |
5000 |
原装正品,假一罚十 |
|||
TOSHIBA |
5 |
||||||
TOSHIBA |
24+ |
con |
5 |
现货常备产品原装可到京北通宇商城查价格 |
|||
JR |
26+ |
SMD |
5800 |
全新原装正品、可开增票、可溯源、一站式配单 |
|||
MOT |
25+ |
DIP |
500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
2023+ |
DIP |
3000 |
进口原装现货 |
TW030N120C芯片相关品牌
TW030N120C规格书下载地址
TW030N120C参数引脚图相关
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TW030N120C数据表相关新闻
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2019-3-5
DdatasheetPDF页码索引
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