3 Band Digital / Hybrid Tuner IC with integrated IF AGC amplifier

文件：1.03215 Mbytes Page：64 Pages

3 Band Digital / Hybrid Tuner IC with integrated IF AGC amplifier

3 Band Digital / Hybrid Tuner IC with integrated IF AGC amplifier

3 Band Digital / Hybrid Tuner IC with integrated IF AGC amplifier

文件：1.02992 Mbytes Page：62 Pages

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

SIL2 Switch/Proximity Transistor-Out Repeater

FEATURES SIL 2 / SC 3 High frequency transistor output Field open and short circuit detection In-field programmability by DIP Switch Three port isolation, Input/Output/Supply High Density, two channels per unit

SIL2 Switch/Proximity Transistor-Out Repeater

FEATURES SIL 2 / SC 3 High frequency transistor output Field open and short circuit detection In-field programmability by DIP Switch Three port isolation, Input/Output/Supply High Density, two channels per unit

SINGLE POLE, SINGLE THROW CONNECTORIZED SWITCHES

文件：40.48 Kbytes Page：1 Pages

Automated probe manufacturing enables low cost and short lead time

文件：520.51 Kbytes Page：4 Pages