Automated probe manufacturing enables low cost and short lead time

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

SIL2 Switch/Proximity Transistor-Out Repeater

FEATURES SIL 2 / SC 3 High frequency transistor output Field open and short circuit detection In-field programmability by DIP Switch Three port isolation, Input/Output/Supply High Density, two channels per unit

SIL2 Switch/Proximity Transistor-Out Repeater

FEATURES SIL 2 / SC 3 High frequency transistor output Field open and short circuit detection In-field programmability by DIP Switch Three port isolation, Input/Output/Supply High Density, two channels per unit

SINGLE POLE, SINGLE THROW CONNECTORIZED SWITCHES

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