Infrared Emitting Diode, 950 nm, GaAs

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Silicon PIN Photodiode

DESCRIPTION TEFD4300 is a silicon PIN photodiode with high radiant sensitivity in clear, T-1 plastic package. It is sensitive to visible and near infrared radiation. FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 • High radiant sensitivity • Suitable for v

Silicon NPN Phototransistor

DESCRIPTION TEFT4300 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1 plastic package with daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 •