High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs

DESCRIPTION TSML1000 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a clear, untinted plastic package (with lens) for surface mounting (SMD). FEATURES • Package type: surface mount • Package form: GW, RGW, yo

Extented Power IR Emitting Diode in SMD Package

DESCRIPTION TSML1000 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a clear, untinted plastic package (with lens) for surface mounting (SMD). FEATURES • Package type: surface mount • Package form: GW, RGW, yo

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

DESCRIPTION TSML1000 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a clear, untinted plastic package (with lens) for surface mounting (SMD). FEATURES • Package type: surface-mount • Package form: GW, RG

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Package type: surface-mount\nPackage form: GW, RGW, yoke, axial\nDimensions (L x W x H in mm): 2.5 x 2 x 2.7;

High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs

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High Power Infrared Emitting Diode

文件：198.48 Kbytes Page：9 Pages

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

文件：196.83 Kbytes Page：9 Pages

High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs

文件：199.07 Kbytes Page：9 Pages

封装/外壳：2-SMD，Z形弯曲 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：EMITTER IR 940NM 100MA SMD 光电器件 LED 发射器 - 红外，紫外，可见光

High Speed Infrared Emitting Diode, RoHS-Compliant, 890 nm, Surface Emitter Technology

DESCRIPTION TSMF1000 series are infrared, 890 nm emitting diodes based on surface emitter chip technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). FEATURES • Package type: surface-mount • Package form: GW, R

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Package type: surface-mount\nPackage form: GW, RGW, yoke, axial\nDimensions (L x W x H in mm): 2.5 x 2 x 2.7;

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs

文件：199.07 Kbytes Page：9 Pages

High Power Infrared Emitting Diode

文件：198.48 Kbytes Page：9 Pages

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

文件：196.83 Kbytes Page：9 Pages

SUPERFAST RECOVERY RECTIFIERS(VOLTAGE: 50 to 400 Volts CURRENT: 10.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, hig

SUPERFAST RECOVERY RECTIFIERS(VOLTAGE: 50 to 400 Volts CURRENT: 10.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, hig

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the combination the planar type and the glass seal • Large power dissipation: PD = 500 mW (With a printed-circuit board) • Wide voltage range: VZ = 2.0 V to 39 V • Easy-to-use because of the fine

Medium-Power Complementary Silicon Transistors

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

MICROMACHINED ACCELEROMETER

The XMMA series of silicon capacitive, micromachined accelerometers features; signal conditioning, a 4–pole low pass filter and temperature compensation. Zero–g offset full scale span and filter cut–off are factory set and require no external devices. A full system self–test capability verifies sy