Transient Voltage Protection Device 75 to 320 Volts

Features • Oxide-Glass passivated Junction • Bi-Directional protection in a single device • Surge capabilities up to 100A@10/1000us or 400A@8/20us • High Off-State impedance and Low On-State voltage • Plastic material has UL flammability classification 94V -0

Bi-Directional 100 Amp 50-270 Volts Thyristor Surge Protective Device

Bi-Directional 100 Amp 50-270 Volts Thyristor Surge Protective Device (TSPD)

封装/外壳：DO-214AA，SMB 包装：散装 描述：THYRISTOR 220V 400A DO214AA 电路保护 TVS - 晶闸管

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible A

Low-voltage dual frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1018M BICMOS device integrates prescalers, programmable dividers, and phase comparators to implement two phase-locked loops. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3