型号 功能描述 生产厂家 企业 LOGO 操作
TSMBJ1016C

Transient Voltage Protection Device 75 to 320 Volts

Features • Oxide-Glass passivated Junction • Bi-Directional protection in a single device • Surge capabilities up to 100A@10/1000us or 400A@8/20us • High Off-State impedance and Low On-State voltage • Plastic material has UL flammability classification 94V -0

MCC

TSMBJ1016C

Bi-Directional 100 Amp 50-270 Volts Thyristor Surge Protective Device

Bi-Directional 100 Amp 50-270 Volts Thyristor Surge Protective Device (TSPD)

MICROSEMI

美高森美

FOR OPTICAL INFORMATION SYSTEMS

DESCRIPTION ML1XX6 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 658-nm and standard CW light output of 30mW. ML1XX6 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

MITSUBISHI

三菱电机

Integrated Circuit AF Small-Signal Amplifier for Tape Recorder

Integrated Circuit AF Small–Signal Amplifier for Tape Recorder

NTE

Recording/playback and 2 W audio power amplifier

GENERAL DESCRIPTION The TDA1016 is a monolithic integrated audio power amplifier, preamplifier and A.L.C. circuit designed for applications in radio-recorders and recorders. The wide supply voltage range makes this circuit very suitable for d.c. and a.c. apparatus. The circuit incorporates the fo

PHILIPS

飞利浦

16A SCRs

DESCRIPTION The TYN / TN16 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

STMICROELECTRONICS

意法半导体

.050 NPN Phototransistors

PRODUCT DESCRIPTION A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is brought out allowing conventional transistor biasing. These devices

PERKINELMER

TSMBJ1016C产品属性

  • 类型

    描述

  • 型号

    TSMBJ1016C

  • 功能描述

    硅对称二端开关元件 190V 100A

  • RoHS

  • 制造商

    Bourns 转折电流

  • VBO

    40 V 最大转折电流

  • IBO

    800 mA

  • 不重复通态电流

    额定重复关闭状态电压

  • VDRM

    25 V

  • 关闭状态漏泄电流(在VDRM_IDRM下)

    保持电流(Ih

  • 最大值)

    50 mA

  • 开启状态电压

    5 V 关闭状态电容

  • CO

    120 pF

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    DO-214AA

更新时间:2026-3-16 17:44:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
KYOCERA/京瓷
25+
QFN
30000
代理原装现货,价格优势
MCC
19+
SMB
200000
KYOCERA
25+
QFN
1179
百分百原装正品 真实公司现货库存 本公司只做原装 可
ITM
25+
NA
880000
明嘉莱只做原装正品现货
CHINAXYJ
23+
0603X5
9868
专做原装正品,假一罚百!
BTLFUSE
2223+
1206
26800
只做原装正品假一赔十为客户做到零风险
25+23+
3W
33891
绝对原装正品全新进口深圳现货
KYOCERA
22+
QFN
20000
公司只做原装 品质保证
MCC
24+
SMB
94000
原装现货假一赔十
24+
5000

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