INFRARED LIGHT-TO-FREQUENCY CONVERTER

文件：83.02 Kbytes Page：6 Pages

INFRARED LIGHT-TO-FREQUENCY CONVERTER

文件：595.92 Kbytes Page：11 Pages

INFRARED LIGHT-TO-FREQUENCY CONVERTER

INFRARED LIGHT-TO-FREQUENCY CONVERTER

INFRARED LIGHT-TO-FREQUENCY CONVERTER

文件：157.21 Kbytes Page：10 Pages

INFRARED LIGHT-TO-FREQUENCY CONVERTER

文件：157.21 Kbytes Page：10 Pages

封装/外壳：径向 - 3 引线 包装：卷带（TR） 描述：SENSOR OPT 940NM IR RADIAL 3PIN 传感器，变送器 光学传感器 - 环境光，IR 红外线，UV 紫外线传感器

INFRARED LIGHT-TO-FREQUENCY CONVERTER

文件：157.21 Kbytes Page：10 Pages

封装/外壳：3-SMD，侧视图 包装：卷带（TR） 描述：SENSOR OPT 940NM IR SMD 传感器，变送器 光学传感器 - 环境光，IR 红外线，UV 紫外线传感器

INFRARED LIGHT-TO-FREQUENCY CONVERTER

文件：157.21 Kbytes Page：10 Pages

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

N-channel silicon field-effect transistors

文件：97.4 Kbytes Page：11 Pages

N-channel silicon field-effect transistors

文件：97.4 Kbytes Page：11 Pages

VHF power MOS transistor

文件：91.6 Kbytes Page：12 Pages