Very high accuracy (20 μV), zero-drift, rail-to-rail output, 3 MHz, 36 V op amp

Features • Very low offset voltage: 20 μV max. @ 25 °C • Rail-to-rail output • Wide supply voltage: 4 to 36 V • Gain bandwidth product: 3 MHz • Slew rate: 2 V/μs • Low noise: 24 nV/√Hz • EMI hardened • High ESD tolerance: 4 kV HBM • Extended temperature range: -40 °C to 125 °C • AEC-Q100

Very high accuracy (20 µV) automotive grade, zero drift, rail to rail output, 3 MHz,36 V op amp

The TSB181 and TSB182 are very high precision operational amplifiers ensuring a maximum input offset voltage of 20 µV. They can operate over an extended supply voltage range and feature rail-to-rail output. They offer an excellent speed/current consumption ratio with 3 MHz gain bandwidth product whi • Very low offset voltage: 20 µV max. @ 25 °C \n• Wide supply voltage: 4 to 36 V \n• Slew rate: 2 V/µs \n• EMI hardened \n• Extended temperature range: -40 °C to 125 °C \n• AEC-Q100 qualified;

丝印代码：TSB181I；Very high accuracy (20 μV), zero-drift, rail-to-rail output, 3 MHz, 36 V op amp

Features • Very low offset voltage: 20 μV max. @ 25 °C • Rail-to-rail output • Wide supply voltage: 4 to 36 V • Gain bandwidth product: 3 MHz • Slew rate: 2 V/μs • Low noise: 24 nV/√Hz • EMI hardened • High ESD tolerance: 4 kV HBM • Extended temperature range: -40 °C to 125 °C • AEC-Q100

丝印代码：TSB181IY；Very high accuracy (20 μV), zero-drift, rail-to-rail output, 3 MHz, 36 V op amp

Features • Very low offset voltage: 20 μV max. @ 25 °C • Rail-to-rail output • Wide supply voltage: 4 to 36 V • Gain bandwidth product: 3 MHz • Slew rate: 2 V/μs • Low noise: 24 nV/√Hz • EMI hardened • High ESD tolerance: 4 kV HBM • Extended temperature range: -40 °C to 125 °C • AEC-Q100

丝印代码：K243；Very high accuracy (20 μV), zero-drift, rail-to-rail output, 3 MHz, 36 V op amp

Features • Very low offset voltage: 20 μV max. @ 25 °C • Rail-to-rail output • Wide supply voltage: 4 to 36 V • Gain bandwidth product: 3 MHz • Slew rate: 2 V/μs • Low noise: 24 nV/√Hz • EMI hardened • High ESD tolerance: 4 kV HBM • Extended temperature range: -40 °C to 125 °C • AEC-Q100

丝印代码：K244；Very high accuracy (20 μV), zero-drift, rail-to-rail output, 3 MHz, 36 V op amp

Features • Very low offset voltage: 20 μV max. @ 25 °C • Rail-to-rail output • Wide supply voltage: 4 to 36 V • Gain bandwidth product: 3 MHz • Slew rate: 2 V/μs • Low noise: 24 nV/√Hz • EMI hardened • High ESD tolerance: 4 kV HBM • Extended temperature range: -40 °C to 125 °C • AEC-Q100

VHF variable capacitance diode

DESCRIPTION The BB181 is a variable capacitance diode, fabricated in planar technology and encapsulated in the SOD523 (SC-79) ultra small plastic SMD package. FEATURES • Excellent linearity • Ultra small plastic SMD package • C28: 1 pF; ratio: 14. APPLICATIONS • Electronic tuning in satelli

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers at    collector currents from 0.5 mA to 12 mA.

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,