Single Phase 8.0 Amps. Glass Passivated Bridge Rectifiers

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Single Phase 8.0 Amps. Glass Passivated Bridge Rectifiers

文件：227.83 Kbytes Page：2 Pages

Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers

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Glass Passivated Bridge Rectifiers

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8A, 50V - 1000V Glass Passivated Bridge Rectifiers

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封装/外壳：4-SIP，TS-6P 包装：散装 描述：BRIDGE RECT 1PHASE 600V 8A TS-6P 分立半导体产品 二极管 - 桥式整流器

8A, 600V, Standard Bridge Rectifier

封装/外壳：4-SIP，TS-6P 包装：散装 描述：BRIDGE RECT 1PHASE 600V 8A TS-6P 分立半导体产品 二极管 - 桥式整流器

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -8A@ TC=25℃ ·Drain Source Voltage -VDSS= -50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs

These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regu

8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs

These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regu

P-channel Enhancement Mode Power MOSFET

Features  VDS= -60V, ID= -20A RDS(ON)

P-Channel 60-V (D-S) MOSFET

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