封装/外壳：4-SIP，TS-6P 包装：散装 描述：BRIDGE RECT 1PHASE 600V 8A TS-6P 分立半导体产品 二极管 - 桥式整流器

封装/外壳：4-SIP，TS-6P 包装：管件 描述：BRIDGE RECT 1PHASE 600V 8A TS-6P 分立半导体产品 二极管 - 桥式整流器

8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs

These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regu

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -8A@ TC=25℃ ·Drain Source Voltage -VDSS= -50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

P-channel Enhancement Mode Power MOSFET

Features  VDS= -60V, ID= -20A RDS(ON)

8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs

These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regu

P-Channel 60-V (D-S) MOSFET

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