360 mW mono amplifier with standby mode

Features • Operating from VCC = 2 V to 5.5 V • Standby mode active high (TS419) or low (TS421) • Output power into 16 Ω: 367 mW @ 5 V with 10% THD+N max or 295 mW @ 5 V and 110 mW @ 3.3 V with 1% THD+N max. • Low current consumption: 2.5 mA max. • High signal-to-noise ratio: 95 dB (A

High Voltage Transistors(PNP Silicon)

High Voltage Transistors PNP Silicon

High Voltage Transistors(PNP)

High Voltage Transistors PNP Silicon

RF POWER TRANSISTORS NPN SILICON

The RF Line ​​​​​​​NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping

2.6 mm Series

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