25A, 50V - 1000V Glass Passivated Bridge Rectifiers

文件：207.9 Kbytes Page：4 Pages

25A, 600V, Standard Bridge Rectifier

封装/外壳：4-SIP，TS-6P 包装：管件 描述：BRIDGE RECT 1P 600V 25A TS-6P 分立半导体产品 二极管 - 桥式整流器

封装/外壳：4-SIP，TS-6P 包装：管件 描述：BRIDGE RECT 1P 600V 25A TS-6P 分立半导体产品 二极管 - 桥式整流器

512 Kbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M25P05 is a 512 Kbit (64K x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 128 bytes at a time, using the Page Program instruction. The memory is organized as 2 sectors, ea

512 Kbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P05 is a 512 K-bit (64K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P05 is designed to allow e

512 Kbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M25P05 is a 512 Kbit (64K x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 128 bytes at a time, using the Page Program instruction. The memory is organized as 2 sectors, ea

512 Kbit, Low Voltage, Serial Flash Memory With 25 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M25Pxx is a 512Kbit to 32Mbit (2M x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. FEATURES SUMMARY ■ 512Kbit to 32Mbit of Flash Memory ■ Page Program (up to 256 Bytes) in 1.4ms(typical) ■ Sector Erase (2

SCHOTTKY BARRIER DIODE

文件：65.89 Kbytes Page：2 Pages