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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TS13 | TACTILE SWITCH FEATURES •7.3mmactuator •100~260gf •throughhole | CUI CUI Inc. |  |   |
TS13 | ALUMINUM ELECTROLYTIC CAPACITOR-GENERAL & MINIATURE 文件：414.02 Kbytes Page：5 Pages | SUNTAN suntan |  | |
TS13 | ALUMINUM ELECTROLYTIC CAPACITOR-GENERAL & MINIATURE 文件：414.02 Kbytes Page：5 Pages | SUNTAN suntan | | |
High Voltage NPN Transistor BVCEO=400V BVCBO=500V Ic=0.1A VCE(SAT),=0.5V@Ic/Ib=50mA/10mA Features ◇Highvoltage. ◇Highspeedswitching Structure ◇Silicontriplediffusedtype. ◇NPNsilicontransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 |  | | |
Galvanic Isolated Blocking 56V Power Load Switch Description TheTS13001isagalvanicisolated56Vpowerswitchdevicewithbi-directionalblocking.Thedeviceincludesasingleintegrated110mOhmhighvoltageFETallowinghighefficiencyswitchingofpowerloadsorotherhighcurrentapplications.Theinputpin,CLK,controlstheturnon/off | SEMTECH Semtech Corporation |  | | |
High Voltage NPN Transistor BVCEO=400V BVCBO=500V Ic=0.1A VCE(SAT),=0.5V@Ic/Ib=50mA/10mA Features ◇Highvoltage. ◇Highspeedswitching Structure ◇Silicontriplediffusedtype. ◇NPNsilicontransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
Galvanic Isolated Blocking 56V Power Load Switch Description TheTS13001isagalvanicisolated56Vpowerswitchdevicewithbi-directionalblocking.Thedeviceincludesasingleintegrated110mOhmhighvoltageFETallowinghighefficiencyswitchingofpowerloadsorotherhighcurrentapplications.Theinputpin,CLK,controlstheturnon/off | SEMTECH Semtech Corporation | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●Lowspreadofdynamicparameters ●Highswitchingspeed ●Lowbasedriverequirement Application ●BallastLighting ●Charger | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor BVCEO=400V BVCBO=700V Ic=8A VCE(SAT),=3V@Ic/Ib=8A/2A Features ◇Suitableforswitchingregulatorandmotorcontrol ◇Highspeedswitching Structure ◇Silicontriplediffusedtype. | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor Features ●HighVoltage ●HighSpeedSwitching Structure ●SiliconTripleDiffusedType ●NPNSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor BVCEO=400V BVCBO=700V Ic=8A VCE(SAT),=3V@Ic/Ib=8A/2A Features ◇Suitableforswitchingregulatorandmotorcontrol ◇Highspeedswitching Structure ◇Silicontriplediffusedtype. | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
Time Delay Relays / Dedicated - Delay-on-Make Description TheTS1Seriesoffersprovenreliabilityandperformancewith yearsofuseinOEMequipmentandcommercialapplications. Thisencapsulatedgeneralusetimingmoduleiscapableof controllingloadcurrentsrangingfrom5mAto1A.Maybe connectedinserieswithcontactors,relays, | Littelfuselittelfuse 力特力特公司 |  | | |
TACTILE SWITCH FEATURES •7.3mmactuator •100~260gf •throughhole | CUI CUI Inc. | | | |
TACTILE SWITCH FEATURES •7.3mmactuator •100~260gf •throughhole | CUI CUI Inc. | | | |
TACTILE SWITCH FEATURES •7.3mmactuator •100~260gf •throughhole | CUI CUI Inc. | | | |
Time Delay Relays / Dedicated - Delay-on-Make Description TheTS1Seriesoffersprovenreliabilityandperformancewith yearsofuseinOEMequipmentandcommercialapplications. Thisencapsulatedgeneralusetimingmoduleiscapableof controllingloadcurrentsrangingfrom5mAto1A.Maybe connectedinserieswithcontactors,relays, | Littelfuselittelfuse 力特力特公司 | | | |
TS135 thur TS1235 THYRISTORS TS135thurTS1235THYRISTORS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  | | |
High Voltage NPN Transistor 文件：281.24 Kbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor 文件：281.24 Kbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor 文件：397.52 Kbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor 文件：281.38 Kbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor 文件：281.38 Kbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor 文件：196.07 Kbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor 文件：281.38 Kbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：TRANS NPN 400V 0.3A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS NPN 400V 0.3A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
High Voltage NPN Transistor 文件：196.07 Kbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor 文件：196.07 Kbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor 文件：196.07 Kbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor 文件：196.07 Kbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor 文件：281.24 Kbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor 文件：397.52 Kbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor 文件：397.52 Kbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
High Voltage NPN Transistor 文件：397.52 Kbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | |
TS13产品属性
- 类型
描述
- 型号
TS13
- 制造商
SUNTAN
- 制造商全称
SUNTAN
- 功能描述
ALUMINUM ELECTROLYTIC CAPACITOR-GENERAL & MINIATURE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Semtech(升特) |
23+ |
SOIC-8 |
25808 |
最新到货,只做原装进口 |
|||
Taiwan Semiconductor Corporati |
25+ |
TO-226-3 TO-92-3(TO-226AA) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
Semtech |
23+ |
TO-18 |
12800 |
原装正品代理商最优惠价格,现货或订货 |
|||
TSC/台半 |
2223+ |
TO-92 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ST |
21+ |
SCR |
23480 |
||||
Semtech Corporation |
22+ |
20QFN |
9000 |
原厂渠道,现货配单 |
|||
TI/德州仪器 |
25+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
|||
ST/意法 |
2023+ |
MODULE |
326 |
主打螺丝模块系列 |
|||
BXCONN(宝讯) |
23+ |
SMD,6.1x3.7mm |
2510 |
原装现货/专做开关15年 |
|||
24+ |
SOP24 |
6000 |
美国德州仪器TEXASINSTRUMENTS原厂代理辉华拓展内地现 |
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TS13规格书下载地址
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一般描述该TS1431/1431A/1431B集成电路是三端可编程并联稳压二极管。这些单片集成电路电压基准作为一个低温度系数可编程齐纳是从VREF到36伏的两个外部电阻器。这些器件表现出宽工作电流范围1.0至100mA的一个典型的动态阻抗0.22Ω。这些引用的特点使它们成为许多优秀的齐纳二极管替代应用，如数字电压表，电源和运算放大器电路。该2.5volt可以方便地参考获得由5.0volt逻辑电源稳定的基准，并自TS1431/1431A/1431B作为分流调节器工作，它可以作为正面或负面的阶段参考。这个系列是提供3引脚TO-92和SOT-23封装。
2013-3-14
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