位置：首页 > IC中文资料第6998页 > TS13
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TS13 | TACTILE SWITCH FEATURES • 7.3 mm actuator • 100~260 gf • through hole | CUI |   | |
TS13 | ALUMINUM ELECTROLYTIC CAPACITOR-GENERAL & MINIATURE 文件：414.02 Kbytes Page：5 Pages | SUNTAN | | |
TS13 | ALUMINUM ELECTROLYTIC CAPACITOR-GENERAL & MINIATURE 文件：414.02 Kbytes Page：5 Pages | SUNTAN | | |
TS13 | TS系列 感温棒测温体 | FOTEK 阳明电机 | | |
High Voltage NPN Transistor BVCEO = 400V BVCBO = 500V Ic = 0.1A VCE (SAT), = 0.5V @ Ic / Ib = 50mA / 10mA Features ◇ High voltage. ◇ High speed switching Structure ◇ Silicon triple diffused type. ◇ NPN silicon transistor | TSC 台湾半导体 | | ||
Galvanic Isolated Blocking 56V Power Load Switch Description The TS13001 is a galvanic isolated 56V power switch device with bi-directional blocking. The device includes a single integrated 110mOhm high voltage FET allowing high efficiency switching of power loads or other high current applications. The input pin, CLK, controls the turn on/off | SEMTECH 先之科 | | ||
High Voltage NPN Transistor BVCEO = 400V BVCBO = 500V Ic = 0.1A VCE (SAT), = 0.5V @ Ic / Ib = 50mA / 10mA Features ◇ High voltage. ◇ High speed switching Structure ◇ Silicon triple diffused type. ◇ NPN silicon transistor | TSC 台湾半导体 | | ||
Galvanic Isolated Blocking 56V Power Load Switch Description The TS13001 is a galvanic isolated 56V power switch device with bi-directional blocking. The device includes a single integrated 110mOhm high voltage FET allowing high efficiency switching of power loads or other high current applications. The input pin, CLK, controls the turn on/off | SEMTECH 先之科 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● Low spread of dynamic parameters ● High switching speed ● Low base drive requirement Application ● Ballast Lighting ● Charger | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor BVCEO = 400V BVCBO = 700V Ic = 8A VCE (SAT), = 3V @ Ic / Ib = 8A / 2A Features ◇ Suitable for switching regulator and motor control ◇ High speed switching Structure ◇ Silicon triple diffused type. | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor | TSC 台湾半导体 | | ||
High Voltage NPN Transistor BVCEO = 400V BVCBO = 700V Ic = 8A VCE (SAT), = 3V @ Ic / Ib = 8A / 2A Features ◇ Suitable for switching regulator and motor control ◇ High speed switching Structure ◇ Silicon triple diffused type. | TSC 台湾半导体 | | ||
Time Delay Relays / Dedicated - Delay-on-Make Description The TS1 Series offers proven reliability and performance with years of use in OEM equipment and commercial applications. This encapsulated general use timing module is capable of controlling load currents ranging from 5mA to 1A. May be connected in series with contactors, relays, | Littelfuse 力特 | | ||
TACTILE SWITCH FEATURES • 7.3 mm actuator • 100~260 gf • through hole | CUI | | ||
TACTILE SWITCH FEATURES • 7.3 mm actuator • 100~260 gf • through hole | CUI | | ||
TACTILE SWITCH FEATURES • 7.3 mm actuator • 100~260 gf • through hole | CUI | | ||
Time Delay Relays / Dedicated - Delay-on-Make Description The TS1 Series offers proven reliability and performance with years of use in OEM equipment and commercial applications. This encapsulated general use timing module is capable of controlling load currents ranging from 5mA to 1A. May be connected in series with contactors, relays, | Littelfuse 力特 | | ||
TS135 thur TS1235 THYRISTORS TS135 thur TS1235 THYRISTORS | STMICROELECTRONICS 意法半导体 | | ||
High Voltage NPN Transistor | TSC 台湾半导体 | | ||
电源开关 IC - 配电 Isolated Switch | SEMTECH 先之科 | | ||
High Voltage NPN Transistor 文件：281.24 Kbytes Page：5 Pages | TSC 台湾半导体 | | ||
High Voltage NPN Transistor 文件：281.24 Kbytes Page：5 Pages | TSC 台湾半导体 | | ||
High Voltage NPN Transistor 文件：397.52 Kbytes Page：5 Pages | TSC 台湾半导体 | | ||
High Voltage NPN Transistor 文件：281.38 Kbytes Page：5 Pages | TSC 台湾半导体 | | ||
High Voltage NPN Transistor 文件：281.38 Kbytes Page：5 Pages | TSC 台湾半导体 | | ||
High Voltage NPN Transistor 文件：196.07 Kbytes Page：5 Pages | TSC 台湾半导体 | | ||
High Voltage NPN Transistor 文件：281.38 Kbytes Page：5 Pages | TSC 台湾半导体 | | ||
封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：TRANS NPN 400V 0.3A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | TSC 台湾半导体 | | ||
封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS NPN 400V 0.3A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | TSC 台湾半导体 | | ||
High Voltage NPN Transistor 文件：196.07 Kbytes Page：5 Pages | TSC 台湾半导体 | | ||
High Voltage NPN Transistor 文件：196.07 Kbytes Page：5 Pages | TSC 台湾半导体 | | ||
High Voltage NPN Transistor 文件：196.07 Kbytes Page：5 Pages | TSC 台湾半导体 | | ||
High Voltage NPN Transistor 文件：196.07 Kbytes Page：5 Pages | TSC 台湾半导体 | | ||
High Voltage NPN Transistor 文件：281.24 Kbytes Page：5 Pages | TSC 台湾半导体 | |
TS13产品属性
- 类型
描述
- 型号
TS13
- 制造商
SUNTAN
- 制造商全称
SUNTAN
- 功能描述
ALUMINUM ELECTROLYTIC CAPACITOR-GENERAL & MINIATURE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TSC/台半 |
24+ |
NA/ |
5656 |
原厂直销,现货供应,账期支持! |
|||
ST |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
SYNAPTIC |
09+ |
QFN(金底) |
470 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MORNSUN |
2450+ |
DIP |
6540 |
只做原厂原装正品终端客户免费申请样品 |
|||
Semtec |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
Salecom Electronics |
25+ |
42 |
公司优势库存 热卖中! |
||||
TI/德州仪器 |
25+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
|||
TSC/台半 |
2223+ |
TO-92 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
SEMTECH/升特 |
23+ |
QFN |
50000 |
只做原装正品 |
|||
TSC |
24+ |
SMD |
12000 |
原厂/代理渠道价格优势 |
TS13芯片相关品牌
TS13规格书下载地址
TS13参数引脚图相关
- UPS电源
- uln2003
- uei30
- udn2981
- ucc28019
- uc3907
- uc3845
- uc3842
- u600
- u300
- u202
- u1205
- t触发器
- type-c
- tx20
- ttl电平
- ttl电路
- tsmc
- tsl2561
- tsl230
- TS13C7
- TS13C6
- TS13C5
- TS13C4
- TS13C3
- TS13C2
- TS13C1
- TS13C0
- TS13AE
- TS13AD
- TS135
- TS13103
- TS13102
- TS13101
- TS13009
- TS13007
- TS13005
- TS13003
- TS13002CTB0G
- TS13002CTB0
- TS13002CTA3G
- TS13002CTA3
- TS13002CT A3
- TS13002CT
- TS13002ACTB0G
- TS13002ACTB0
- TS13002ACTA3G
- TS13002ACTA3
- TS13002ACT A3
- TS13002ACT
- TS13002A_09
- TS13002A_07
- TS13002A
- TS13002_08
- TS13002_07
- TS13002
- TS13001
- TS-130
- TS1-2W182P0RM3PCT
- TS-12-W
- TS12S-V
- TS12S-S
- TS12S-R
- TS12S-M
- TS12N30CS
- TS12N20CS
- TS12M-8.5-160-TR
- TS12M-7.3K3.8-160-TR
- TS12M-7.3K3.8-160-B
- TS12M-4.3-160-B
- TS12A4517P
- TS12A4517DRG4
- TS12A4517DR
- TS12A4517DG4
- TS12A4517DBVR
- TS12A4517D
- TS12A4517
- TS12A4516P
- TS128M
- TS1235
- TS122S
- TS122P
- TS1220
- TS122
- TS120S
- TS120PL
- TS120P
- TS120LS
- TS120L
- TS120F
- TS12012
- TS12011
- TS12001
- TS120
TS13数据表相关新闻
TS12A4516DBVR
进口代理
2023-11-22TS12A4514DBVR
进口代理
2023-2-10TS12A4515DBVR
进口代理
2023-2-7TS3702ID
金亿隆电子有限公司 长期销售各大原装芯片 联系人李小姐 15818751958
2021-3-5TS21CHF
型号：TS21CHF 厂商：LB 封装:SOP16 联系人：陈先生 电话：18018738768（微信同号） QQ：1005525513 我司有一手货源，价优，可以长期提供大量，优质的货源，专业的渠道，物美价廉是公司与客户之间共同的理念 深圳市弘扬盛电子专业经销网络滤波器，网络变压器，RJ45网络连接器系列，USB连接器系列，RJ11插座系类，UTC
2020-4-13TS1431-可调式精密并联稳压器
一般描述 该TS1431/1431A/1431B集成电路是三端可编程并联稳压二极管。这些单片集成电路电压基准作为一个低温度系数可编程齐纳是从VREF到36伏的两个外部电阻器。这些器件表现出宽工作电流范围1.0至100mA的一个典型的动态阻抗0.22Ω。这些引用的特点使它们成为许多优秀的齐纳二极管替代应用，如数字电压表，电源和运算放大器电路。该2.5volt可以方便地参考获得由5.0volt逻辑电源稳定的基准，并自TS1431/1431A/1431B作为分流调节器工作，它可以作为正面或负面的阶段参考。这个系列是提供3引脚TO- 92和SOT-23封装。
2013-3-14
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
