High Voltage NPN Transistor

Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor

High Voltage NPN Transistor

文件：281.38 Kbytes Page：5 Pages

High Voltage NPN Transistor

Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor

High Voltage NPN Transistor

Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor

High Voltage NPN Transistor

文件：281.38 Kbytes Page：5 Pages

High Voltage NPN Transistor

文件：196.07 Kbytes Page：5 Pages

High Voltage NPN Transistor

文件：281.38 Kbytes Page：5 Pages

TO-92, 700V, 0.3A, NPN Bipolar Transistor

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：TRANS NPN 400V 0.3A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS NPN 400V 0.3A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High Voltage NPN Transistor

文件：196.07 Kbytes Page：5 Pages

High Voltage NPN Transistor

文件：196.07 Kbytes Page：5 Pages

High Voltage NPN Transistor

文件：196.07 Kbytes Page：5 Pages

High Voltage NPN Transistor

文件：196.07 Kbytes Page：5 Pages

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency ele

Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency e

Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency e

POWER TRANSISTORS(1.5A,300-400V,40W)

SWITCHMODE SERIES NPN POWER TRANSISTORS ... designed for use in high-voltage, high-speed, power switching in inductive circuit, they are particularly suited for 115 and 220 V switchmode applications such as switching regulators, inverters, DC-DC converter, Motor control, Solenoid/Relay drivers an

1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS

These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.