SiCSchottkyBarrierDiode

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封装/外壳：TO-247-3 包装：管件 描述：DODE SCHOTTKY 650V TO247 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：TO-247-3 包装：管件 描述：SIC SBD TO-247 V=650 IF=12A 分立半导体产品 二极管 - 整流器 - 阵列

20AN-ChannelPowerMOSFET

Features ●RDS(ON)=0.35Ω ●Ultralowgatecharge(Typical150nC) ●Lowreversetransfercapacitance(CRSS=typical36pF) ●Fastswitchingcapability ●Avalancheenergyspecified ●Improveddv/dtcapability,highruggedness Application ●Powerfactorcorrection（PFC） ●Switchedm

20A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC20N65isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

MOSFET650V,20AN-CHANNEL

FEATURE •ProprietaryNewPlanarTechnology •RDS(ON),typ.typ.=0.38Ω@VGS=10V •LowGateChargeMinimizeSwitchingLoss •FastRecoveryBodyDiode DESCRIPTION TheAM20N65isavailableinTO220andTO220F Packages. APPLICATIONS •Adaptor •TVMainPower •SMPSPowerSupply •LCDPanel

20A650VN-channelenhancementmodefieldeffecttransistor

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20Amps,650VoltsN-CHANNELMOSFET

文件：481.89 Kbytes Page：7 Pages