SiC Schottky Barrier Diode

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SiC Schottky barrier diode

封装/外壳：TO-247-3 包装：管件 描述：DODE SCHOTTKY 650V TO247 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：TO-247-3 包装：管件 描述：SIC SBD TO-247 V=650 IF=12A 分立半导体产品 二极管 - 整流器 - 阵列

20A N-Channel Power MOSFET

Features ● RDS(ON) = 0.35Ω ● Ultra low gate charge ( Typical 150 nC ) ● Low reverse transfer capacitance ( CRSS = typical 36 pF ) ● Fast switching capability ● Avalanche energy specified ● Improved dv/dt capability, high ruggedness Application ● Power factor correction（PFC） ● Switched m

20A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC20N65 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand

MOSFET 650V, 20A N-CHANNEL

FEATURE •Proprietary New Planar Technology •R DS(ON),typ. typ.=0.38 Ω@V GS =10V •Low Gate Charge Minimize Switching Loss •Fast Recovery Body Diode DESCRIPTION The AM20N65 is available in TO 220 and TO220F Packages. APPLICATIONS •Adaptor •TV Main Power •SMPS Power Supply •LCD Panel

20A 650V N-channel enhancement mode field effect transistor

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20 Amps,650 Volts N-CHANNEL MOSFET

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