High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory RBSOA. Features ■ High voltage capability ■ Low

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. • Guaranteed 28 Volt, 150 MHz Performance MRF136

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

2.5V REFERENCE DIODE

文件：108.67 Kbytes Page：8 Pages

2.5V REFERENCE DIODE, GUARANTEED TO 100K RADSi TESTED TO MIL-STD-883, METHOD 1019.5

文件：110.36 Kbytes Page：8 Pages

2.5V REFERENCE DIODE, GUARANTEED TO 100K RADSi TESTED TO MIL-STD-883, METHOD 1019.5

文件：110.36 Kbytes Page：8 Pages