Description

The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory RBSOA.

Features

■ High voltage capability

■ Low spread of dynamic parameters

■ Minimum lot-to-lot spread for reliable operation

■ Very high switching speed

■ Integrated antiparallel collector-emitter diode

Applications

■ Electronic ballast for fluorescent lighting

■ Electronic transformer for halogen lamps