TOSHIBA Photo IC Silicon Epitaxial Planar

○ Flat Panel Displays ○ Mobile Phones ○ Notebook PCs, PDAs ○ Video cameras, Digital Still Cameras ○ Other Equipment Requiring Luminosity Adjustment The TPS859 is an ultra-compact surface-mount photo-IC for illuminance sensors which incorporates a photodiode and current amp circuit in a single

Photo-IC with linear output

Application Scope：Illuminance sensors\nRank Classification：A\nVisible ray cut：Not Available\nRoHS Compatible Product(s) (#)：Available

PNP general purpose transistors

DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC849 and BC850. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise input stages of audio frequency equipment.

PNP general purpose transistors

DESCRIPTION PNP transistor in a SOT323 plastic package. NPN complements: BC849W and BC850W. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.

Integrated Circuit Quad, Low Noise, JFET Input Operational Amplifier

Description: The NTE859 (14–Lead DIP) and NTE859SM (SOIC–14 Surface Mount) JFET–input operational amplifiers are low noise amplifiers with low noise input bias, offset currents, and fast slew rate. The low harmonic distortion and low noise make these devices ideally suited as amplifiers for high–

NPN SILICON RF POWER TRANSISTOR

文件：155.82 Kbytes Page：6 Pages

NPN SILICON RF POWER TRANSISTOR

文件：155.82 Kbytes Page：6 Pages