TPS62851x 2.7-V to 6-V, 0.5-A, 1-A, 2-A, and 3-A Step-Down Converters in a SOT583 Package

1 Features • Functional Safety-Capable – Documentation available to aid functional safety system design • Input voltage range: 2.7 V to 6 V • Output voltage from 0.6 V to 5.5 V • 1 feedback voltage accuracy (full temperature range) • TJ = –40°C to +150°C • Family of 0.5-A, 1-A, 2-A (conti

TPS62851x 2.7-V to 6-V, 0.5-A / 1-A / 2-A Step-Down Converter in SOT583 Package

文件：3.04213 Mbytes Page：36 Pages

采用 SOT583 封装的 2.7V 至 6V、1A 固定频率降压转换器

TPS62851x 2.7-V to 6-V, 0.5-A, 1-A, 2-A, and 3-A Step-Down Converters in a SOT583 Package

1 Features • Functional Safety-Capable – Documentation available to aid functional safety system design • Input voltage range: 2.7 V to 6 V • Output voltage from 0.6 V to 5.5 V • 1 feedback voltage accuracy (full temperature range) • TJ = –40°C to +150°C • Family of 0.5-A, 1-A, 2-A (conti

TPS62851x 2.7-V to 6-V, 0.5-A / 1-A / 2-A Step-Down Converter in SOT583 Package

文件：3.04213 Mbytes Page：36 Pages

封装/外壳：SOT-583 功能：降压 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：2.7-V TO 6-V, 1-A, FIXED-FREQUEN 集成电路（IC） 稳压器 - DC-DC 开关稳压器

包装：盒 描述：2.7-V TO 6-V, 1-A STEP DOWN CONV 开发板，套件，编程器 评估板 - DC/DC 与 AC/DC（离线）SMPS

4M High Speed SRAM (512-kword x 8-bit)

Description The HM628511H Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application whi

4M High Speed SRAM (512-kword x 8-bit)

Description The HM628511HC Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high

4M High Speed SRAM (512-kword x 8-bit)

Description The HM628511HI Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application wh

Wide Temperature Range Version 4M High Speed SRAM (512-kword 횞 8-bit)

文件：174.62 Kbytes Page：14 Pages