TPS6281x-Q1 2.75-V to 6-V Adjustable-Frequency Step-Down Converter

1 Features • AEC-Q100 qualified for automotive applications – Device temperature grade 1: –40°C to +125°C TA • Functional Safety-Capable – Documentation available to aid functional safety system design • Input voltage range: 2.75 V to 6 V • Family of 1 A, 2 A, 3 A and 4 A • Quiescent curr

封装/外壳：9-VFQFN 功能：降压 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：AUTOMOTIVE 2.75-V TO 6-V, 4-A ST 集成电路（IC） 稳压器 - DC-DC 开关稳压器

TPS6281x-Q1 2.75-V to 6-V Adjustable-Frequency Step-Down Converter

文件：5.10711 Mbytes Page：46 Pages

TPS6281x-Q1 2.75-V to 6-V Adjustable-Frequency Step-Down Converter

文件：5.96868 Mbytes Page：53 Pages

128Kx8bit CMOS SRAM

DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used

128Kx8bit CMOS SRAM

DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used

128Kx8bit CMOS SRAM

DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used

128Kx8bit CMOS SRAM

DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used

Wide Temperature Range Version 8 M SRAM (1024-kword x 8-bit)

文件：91.14 Kbytes Page：17 Pages