丝印代码：TPH3R70APL；MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 21 nC (typ.) (3) Small output charge: Qoss = 74 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V)

Power MOSFET (N-ch single 60V VDSS 150V)

Application Scope：High efficiency DC/DC converters / Motor drivers / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅨ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 150 A \nPower Dissipation PD 170 W \nDrain-Source voltage VDSS 100 V ;

丝印代码：TPH3R70APL1；MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 21 nC (typ.) (3) Small output charge: Qoss = 74 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V)

Power MOSFET (N-ch single 60V

Application ScopeHigh-Efficiency DC-DC Converters / Switching Voltage Regulators / Motor Drivers\nPolarityN-ch\nGenerationU-MOSⅨ-H\nInternal ConnectionSingle\nRoHS Compatible Product(s) (#)Available

Silicon N-channel MOS (U-MOS-H)

1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 21 nC (typ.) (3) Small output charge: Qoss = 74 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS =