Intelligent power device 40V (Low side switch)

Application Scope：Lamp drivers / Motor drivers / Solenoid drivers\nInput / Output：H/L\nInput / Output (Q1)：H/L\nInput / Output (Q2)：H/L\nNumber of Circuits：1\nProtection Functions：Overcurrent / Overtemperature / Open load / Shorted load\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 6 A \nAverage Forward Current IO 6 A \nPower Dissipation PD 1.84 W \nJunction temperature Tj 150 ℃ \nOperating Temperature (Max) Topr 125 ℃ \nOperating Temperature (Min) Topr -40 ℃ \nInput Voltage (Max) VIN 6 V \nPower Supply Voltage VDD -0.3 to 6 V \nDrain-Source voltage V;

Low-Side Switch for Solenoid, Motor and Lamp Drive

文件：739.31 Kbytes Page：15 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Dual JFET Input Precision High Speed Op Amp?

文件：175.73 Kbytes Page：3 Pages

Dual and Quad, JFET Input Precision High Speed Op Amps

文件：869.85 Kbytes Page：12 Pages

Dual and Quad, JFET Input Precision High Speed Op Amps

文件：869.85 Kbytes Page：12 Pages

Dual and Quad, JFET Input Precision High Speed Op Amps

文件：869.85 Kbytes Page：12 Pages