TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.) • Low leakage current: IDSS = 10 μA (max

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

文件：209.62 Kbytes Page：7 Pages

High Voltage Current Shunt Monitor

GENERAL DESCRIPTION The AD8211 is a high voltage, precision current shunt amplifier. It features a set gain of 20 V/V, with a typical ±0.35 gain error over the entire temperature range. The buffered output voltage directly interfaces with any typical converter. Excellent commonmode rejection from

High Voltage Current Shunt Monitor

GENERAL DESCRIPTION The AD8211 is a high voltage, precision current shunt amplifier. It features a set gain of 20 V/V, with a typical ±0.35 gain error over the entire temperature range. The buffered output voltage directly interfaces with any typical converter. Excellent commonmode rejection from

Particulate Respirators 8511 and 8211, N95

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Quick Connect Terminals

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High Voltage, Current Shunt Monitor

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