TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

Lithium Ion Battery Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement mode: Vth = 0.5~1.2 V (VDS =

Lithium Ion Battery Applications

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

Lithium Ion Battery Applications

文件：193.48 Kbytes Page：7 Pages

Electronic, 2 C #18 Str TC, EPDM Ins, OA TC Brd, PVC Jkt

Product Description Electronic, 2 Conductor 18AWG (16x30) Tinned Copper, EPDM Insulation, Overall Tinned Copper Braid(73) Shield, PVC Outer Jacket

USB to 16 Reed Relay Outputs Digital Interface Adapter

Features • 16 Reed relay outputs (SPST) • Highly reliable 10VA DIP Reed relays • Two 16-pin removable screw terminals simplify field wiring • Powered by USB connection • DIN rail mounting option available (Item# DR102) • Includes 6′ USB device cable (Item# CA179) • Sealevel SeaIO Classic so

High Voltage, Precision Difference Amplifier

GENERAL DESCRIPTION The AD8208 is a single-supply difference amplifier ideal for amplifying and low-pass filtering small differential voltages in the presence of a large common-mode voltage. The input commonmode voltage range extends from −2 V to +45 V at a single +5 V supply. The AD8208 is quali

T3/DS3/E3/STS-1 Input/Output Transformers

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High Voltage, Precision Difference Amplifier

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