THE GLOBAL EXPERT IN SOLID STATE RELAY TECHNOLOGY

DPA Series • 16 Pin DIP SSR • Ratings to 1A @ 280 VAC • SCR output • Voltage or current-control input • Zero-crossing (resistive loads) output

1 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY

Features Transient protection for high speed data lines to IEC 61000-4-2 (ESD) +15kV (air), +8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns)

Uni-direction ESD Protection Array

Features » Low operating voltage: 5V/ Ultra low capacitance: 0.8pF Ultra low leakage: nA level » Low clamping voltage » “IEC 61000-4-2 (ESD) immunity test Air discharge: £25k Contact discharge: +25kV -IEC61000-4-4 (EFT) 40A (5/50ns) -IEC61000-4-5(Lightning):4.5A(8/20ps) » These are Pb-Fr

High Performance TIM

PRODUCT DESCRIPTION Tpcm™ 7000 is newest in Laird’s line of high-performance TIM product offerings. With a thermal conductivity of 7.5 W/mK, Tpcm™ 7000 is designed to enhance the cooling of the most rigorous thermal challenges in electronics. Softening between 50°C – 70°C, the initial pad thickne

High Speed and High Efficiency DC-DC Converters, Notebook PC Applications, Portable Equipment Applications

High-Efficiency DC／ DC Converter Applications Notebook PC Applications Portable-Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 6.0 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 7 mΩ (typ.) • High forward tr

Field Effect Transistor Silicon N-Channel MOS Type (U-MOS??

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 5.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 46 S (typ.) • Low leakage current: IDSS = 10 μA (

Field Effect Transistor Silicon P Channel MOS Type (U-MOS??

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 6.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 44S (typ.) • Low leakage current: IDSS = −10 μA (

Low Capactiance 4-Line TVS Array

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Low Capactiance 4-Line ESD-Protection

Low Capactiance 4-Line TVS Array

Low Capactiance 4-Line TVS Array

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封装/外壳：垂直式，4 PC 引脚 包装：卷带（TR） 描述：CMC 2.41MH 5A 2LN TH 滤波器 共模扼流圈

High reliability

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Heat sink preheating not required

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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)

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Power MOSFET (N-ch single VDSS 30V)

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)

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