TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)

Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications • Low drain-source ON resistance : P Channel RDS (ON) = 60 mΩ (typ.) N Channel RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance : P Channel

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)

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Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications

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Power MOSFET (N-ch + P-ch complementary

Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)

文件：320.35 Kbytes Page：11 Pages

Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications

文件：319.89 Kbytes Page：11 Pages

Microphone Cable, 2 Conductor 20 AWG, TC

Product Description 20 AWG stranded (26x34) high-conductivity TC conductors, EPDM rubber insulation, rayon braid, TC braid shield (85 coverage), cotton wrap, CSPE - Chlorosulphonated Polyethylene jacket.

Light Weight, Voltage Mode, Triaxial Accelerometer

MALE/FEMALE THREADED STANDOFFS

[KEYSTONE] MALE/FEMALE THREADED STANDOFFS PC 104 MOUNTING KITS NYLON STANDOFFS

Polyester Tape

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Heyco-Flex™ Liquid Tight Conduit Fittings

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