BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAFieldEffectTransistorSiliconP-ChannelMOSType(U-MOSIV)

NotebookPCApplications PortableEquipmentApplications •Lowdrain-sourceONresistance:RDS(ON)=60mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=5.9S(typ.) •Lowleakagecurrent:IDSS=−10μA(max)(VDS=−30V) •Enhancementmodel:Vth=−0.8to−2.0V,(VDS=−10V,ID=−1

RS-232,LowCap,#22-4pr,SR-PVC,O/AFoilBraid,PVCJkt,CMG

ProductDescription ComputerEIARS-232Cable,22AWGstranded(7x30)tinnedcopperconductors,semi-rigidPVCinsulation,4twistedpairs,overallBeldfoil®(100coverage) +tinnedcopperbraidshield(65coverage),PVCjacket.

LOWSKEW,1-TO-4LVCMOS/LVTTLFANOUTBUFFER

GENERALDESCRIPTION TheICS8304Iisalowskew,1-to-4FanoutBufferandamemberoftheHiPerClockS™familyofHighPerformanceClockSolutionsfromICS.TheICS8304Iischaracterizedatfull3.3VforinputV DD,andmixed3.3Vand2.5Vforoutputoperatingsupplymodes(VDDO).Guaranteedou

LowSkew,1-to-4LVCMOS/LVTTLFanoutBuffer

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Wire-Thread-Inserts

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PremierSupplierofElectronicHardware

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