TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV)

Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 60 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.9 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement model: Vth = −0.8 to −2.0 V, (VDS = −10 V, ID = −1

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power MOSFET (P-ch dual)

Polarity：P-ch×2\nGeneration：U-MOSⅣ\nRoHS Compatible Product(s) (#)：Available Drain current (Q1) ID -3.2 A \nDrain current (Q2) ID -3.2 A \nPower Dissipation PD 1.35 W \nDrain-Source voltage (Q1) VDSS -30 V \nDrain-Source voltage (Q2) VDSS -30 V ;

2-PHASE DD MOTOR DRIVER

2-PHASE DD MOTOR DRIVER

2-PHASE DD MOTOR DRIVER

2-PHASE DD MOTOR DRIVER

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited fo

SUPER BRIGHT T-1 3/4 (5 mm) LED LAMP - Water Clear

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MOTOR DRIVER FOR CAMERA

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